Macquarie University
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Advancements to physics-based modelling of gallium nitride high-electron mobility transistors

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posted on 2023-08-10, 05:56 authored by Jason Hodges

Gallium nitride (GaN) high-electron mobility transistors (HEMTs) have been a topic of rigorous research over the past several decades due to the promising theoretical properties of the GaN-based material system, where such properties include high carrier mobility, high breakdown voltages, high saturation velocity etc. Throughout the development of the GaN-based material system, it has been of an equal importance that a robust and accurate compact model for GaN HEMTs is standardised in order to allow for the translation of such devices into real world circuit applications. During recent times, the industry has seen the standardisation of the Advanced Spice Model for GaN HEMTs, ASM-HEMT, which is a physics-based compact model derived from the core formulations of the surface potential. As the GaN-based material system is still within its infancy, the importance of a robust and accurate physics-based compact model allows for meaningful insights into the development of device fabrication where the associated parameters pertain to the intrinsic device physics. This provides designers, at both the device and circuit level, with a more meaningful model card where the true performance of a design can be analysed at the fundamental level. As the GaNbased material system progresses, it is of the utmost importance that the ASM-HEMT model advances alongside with it. Naturally, in order for the ASM-HEMT model to be accepted as an industry standard model, it is already considered as an extremely robust and accurate compact model. However, due to the progressive nature of the GaN-based material system, advanced devices have been seen to exhibit characteristics that demand to be accounted for. The research efforts presented in this thesis serve as proposal methodologies to account for such characteristics which adhere to the physics-based nature of the ASM-HEMT model.


Table of Contents

1. Gallium Nitride HEMTs - Technology and Overview -- 2. A Computationally E?cient Modelling Methodology for Field-Plates in GaN HEMTs -- 3. Modelling the Impact of the High-Field Region on the C-V Characteristics in GaN HEMTs -- 4. Consistent Modelling of I-V and C-V Behaviour of GaN HEMTs in Presence of Trapping -- 5. Methodology to Analyse the Impact of Manufacturing Variations on the Non-linear Stability of RF GaN HEMTs using a Physics-based Compact Model -- 6. Physics-based Modelling of GaN HEMTs for Accurate mm-Wave MMIC Design: A Case Study -- 7. Discussion and Future Work -- Appendices -- List of Symbols -- References

Awarding Institution

Macquarie University

Degree Type

Thesis PhD

Department, Centre or School

School of Engineering

Year of Award


Principal Supervisor

Sourabh Khandelwal

Additional Supervisor 1

Michael Heimlich


Copyright: The Author Copyright disclaimer:




178 pages

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