EMI analysis of GaN based buck converter using physical model in AWR

The high performances of GaN transistors can be defined as faster switching capability, smaller parasitic parameter and better electric characteristic. All these features make them popular in dc-dc converter designs to achieve higher power density and and faster transient response capability. This research focuses on the circuit modelling of the next generation power devices. The GaN HEMT module based on Verilog-AMS language is applied in specific citcuits. AWR design environment is used to simulate the design circuits and the data measurements are analysed. The EMI analysis of the synchronous bucked based on GaN physical model are measured by the adjustment of parameters inside GaN device. Meanwhile, the typical dc-dc converters based on GaN HEMT and the application of GaN technology are discussed.