Macquarie University
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Low-frequency noise characterisation and modelling of metal-Oxide-semiconductor field-effect transistors

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posted on 2022-03-28, 13:50 authored by Jason Thomas Hodges
The work presented here develops a systematic and self-consistent framework for the characterisation and modelling of low-frequency noise that is present in Silicon Metal-Oxide-Semiconductor Field-Effect Transistors (Si MOSFETs). The techniques and procedures developed in this work are general and can typically be applied to the low-frequency noise characterisation of any semiconductor device.In general, there are three topics presented in this work. First, a mathematical review of the mechanisms involved with the analysis of noise is presented.Furthermore, various types of intrinsic noise sources are mathematically reviewed.Second, an insight into the hardware associated with the characterisation oflow-frequency noise is given. Techniques and methods for validating the noise floor of a low-frequency noise measurement system are presented.Third, a systematic approach for validating the measured noise data is pre-sented by means of manually modelling the measured data. This is opposed to the use of software packages where automatic parameter extraction is typically performed.This work, in its entirety, is shown to hold for a given Si n-channel MOSFETdevice.


Table of Contents

1. Introduction -- 2. Noise mechanism -- 3. Noise characterisation -- 4. Device modelling and data verification -- 5. Conclusion and future work


Theoretical thesis. Bibliography: pages 59-62

Awarding Institution

Macquarie University

Degree Type

Thesis MRes


MRes, Macquarie University, Faculty of Science and Engineering, Department of Engineering

Department, Centre or School

Department of Engineering

Year of Award


Principal Supervisor

Michael Heimlich


Copyright Jason Thomas Hodges 2017. Copyright disclaimer:




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