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Modelling radio frequency GaN HEMT using physics-based model in AWR

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posted on 28.03.2022, 16:56 by Gajan Panuraj
The modelling of an ASM GaN HEMT in low cost and high durability with lon life periods will definitely attract the industrial development in the semiconductor mass production activities. There are many companies involved in the mass production of GaN transistors ; due to this reason GaN transistors are available in the common market with various brand names. The research on Modelling radio frequency GaN HEMT using physics-based model in AWRto extract the DC parameters and RF parameters are widely analysed in this thesis research paper. The first portion of this research paper is giving background knowledge to the reader regarding the GaN transistor and RF performance. Then the body of this research paper would contain the ASM GaN HEMT model , modelling, application of Verilog-A language which will be incorporated with AWR in this project, simulation and tuned results of the DC parameter and RF parameter extraction with a GaN model and AWR IV characteristics and S-parameters. Then the report will further discuss the results, future work on modelling and conclusion of the GaN HEMT modelling.


Table of Contents

1. Introduction -- 2. Literature review -- 3. Physics based GaN RF model -- 4. Modelling and simulations -- 5. Future work on RF and GaN HEMT modelling -- 6. Conclusion -- Appendices -- Bibliography.


Bibliography: pages 60-61 Empirical thesis.

Awarding Institution

Macquarie University

Degree Type

Thesis bachelor honours


BSc (Hons), Macquarie University, Faculty of Science and Engineering, School of Engineering

Department, Centre or School

School of Engineering

Year of Award


Principal Supervisor

Sourabh Khandelwal


Copyright Gajan Panuraj 2017. Copyright disclaimer: http://mq.edu.au/library/copyright




1 online resource (xiii, 63 pages diagrams, graphs, tables)

Former Identifiers

mq:70301 http://hdl.handle.net/1959.14/1262331

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