Novel UV direct write fabrication technique for surface electronic structures on diamond

This thesis examines the feasibility of using a novel UV etching process to enhance fabrication of electronic devices on hydrogen-terminated diamond surfaces. Diamond is considered as a potential material for high performance electronic applications due to its unique and extreme mechanical and electronic properties. A p-type conductivity originating from a hydrogen terminated diamond surface forms the basis for a variety of electronic devices. In this thesis, the highly-controlled surface modification provided by UV etching has been used to simplify fabrication process of some electronic devices. Resistors, a Schottky diode, and a MOSFET have been fabricated using the technique, and their electrical properties are presented. The potential for the technique to enhance diamond surface MOSFETs performance is discussed.