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Performance comparison of gallium nitride (GaN) in DC-DC converter circuit

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thesis
posted on 28.03.2022, 10:14 by Maria Rahman
Solar power system is a free sources of sustainable power unlike fossil fuels, and inexhaustible. Converters can shift the level of voltage from one to another through switches. Which is very important for solar power system. Transistor plays a vital role in any converter circuit because the overall efficiency of a circuit depends on the switching losses. Transistor works as switch in a converter circuit. In last few years it has been proven that Gallium Nitride (GaN) based switches have benefits over silicon switches. Using GaN technology reduces the cost of design and the construction of transistors. The GaN based transistor has the ability to operate at a high frequency with low switching power loss. This study is based on a boost converter circuit, where three different transistor model were used to compare their output and efficiency. The output was measured based on simulation conducted on LTSpice platform. Then comes to a decision as to which transistor can give better performance.

History

Table of Contents

Chapter 1.Introduction -- Chapter 2. Literature review -- Chapter 3. Analysis and simulation diagram -- Chapter 4. Circuit descriptions and simulations -- Chapter 5. Outcome and results -- Chapter 6. Conclusion.

Notes

Bibliography: pages 54-59 Theoretical thesis.

Awarding Institution

Macquarie University

Degree Type

Thesis MRes

Degree

MRes, Macquarie University, Faculty of Faculty of Science and Engineering, Department of Engineering

Department, Centre or School

Department of Engineering

Year of Award

2017

Principal Supervisor

Michael Heimlich

Rights

Copyright Maria Rahman 2017. Copyright disclaimer: http://mq.edu.au/library/copyright

Language

English

Extent

1 online resource (59 pages) illustrations (some colour)

Former Identifiers

mq:71458 http://hdl.handle.net/1959.14/1274548