The influence of PE-CVD parameters on the characteristics of deposited ZrO2 thin film
The deposition of thin films using Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) is a critical process in various technological applications such as microelectronics, optics, and sensors. This research aimed to optimise the deposition process by investigating the effects of different parameters on the film's properties, including film thickness, uniformity, and crystalline structure. Through a systematic experimental approach and advanced characterization techniques, the study successfully identified key parameters that significantly influence the film quality and deposition rate. Throughout this study, the experimental approach involved varying parameters such as precursor and substrate temperature (100-500 °C), deposition time (1-2 h), substrate material as well as the position of the substrate to analyse their impact on the properties of the ZrO2 thin films. Using advanced characterisation techniques including scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), the crystalline structure and surface morphology of the deposited films were analysed. The results revealed crucial correlations between these parameters and the film's characteristics, leading to the identification of key factors for achieving optimal film quality. A deposition temperature of 400 °C for 1 h proved to be the optimal condition for depositing high-quality ZrO2 thin films with good uniformity and a crystalline structure on both silicon (Si) wafer and glass substrates. A major factor that was also identified is the impact of seeding on the film's properties including the crystalline structure and grain size. The type of seeding can alter the nucleation and growth behaviour of the thin film, with ZrO2 seeds sprayed by Flame Spray Pyrolysis (FSP) increasing the particle size from 16 to 224 nm on Si wafer and similar effect on glass substrates. The optimized deposition process outlined in this study offers a promising avenue for enhancing the performance and reliability of ZrO2 thin films in practical applications, paving the way for further advancements in the field of thin film technology.