W-band circuits for next generation point-to-point wireless communications

The exponential growth in wireless data traffic, fuelled by the universal adoption of smartphone and tablet technology, is driving demand for faster, more efficient and higher capacity wireless networks. As the microwave spectrum rapidly approaches saturation, next-generation 5G and 6G infrastructures are looking to the millimetre wave as the next evolution in wireless infrastructure. With 100 gigabits per second data rates demonstrated over the air at E-band frequencies, attention now turns to achieving better at telecommunications allocated at W-band. This thesis first verifies and repeats worlds-best existing W-band power amplifier performance through design and simulation of a unit amplifier and a combined corporate amplifier in a commercially available 0.1_m GaAs pHEMT process. Using this as a foundation, a proprietary pre-release 0.1_m GaAs pHEMT process is used to extend the power and frequency performance of the unit amplifier. Through high frequency loadpull simulation for accurate matching network design, an iterative approach to amplifier design is developed to explore and demonstrate the power and frequency limits of 0.1_m GaAs pHEMT technology.