X-band power amplifier design with live thermal measurements through gate resistance thermometry

This document outlines the design of an X-band PA (power amplifier), designed for use with a GRT (gate resistance thermometry) system for live thermal measurements at transistor gates. The PA was designed using GaN (gallium nitride) as the basis for the circuit's transistors for maximal output power, and to a lesser extent gain and PAE (power added efficiency). As such, research factors around the design were outlined to give context to modern PA applications and constraints, as well as design decisions and the measurement process. The design process itself is then discussed, examining the decisions made in creating the overall circuit, each of the three matching networks and in finalising the design for each circuit variant. Measurements were then taken for manufactured circuits, discussing the differences between circuit variants and individual circuits of the same type, as well as compared to the simulations, in terms of s-parameters, large signal parameters, such as output power, gain and PAE, and GRT measurements. Finally, the future direction of the thesis content is outlined to improve the circuit design in future and fully realise the potential of GRT measurements in using PAs.